Structure, electronic and photoluminescence study of Si doped ZnO nano-particles

International Conference on Advances in Materials and Manufacturing Applications 2016

Bajpai, Gaurav^1 ; Srivastava, Tulika^1 ; Kumar, Sunil^1 ; Shirage, Parasharam^1,2 ; Somaditya, Sen^1,2

Centre for Materials Science and Engineering, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore

452020, India^1

Discipline of Physics, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore

452020, India^2

关键词: Doped ZnO;    Oxygen deficiency;    Urbach energy;    Wurzite;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/149/1/012186/pdf
DOI  :  10.1088/1757-899X/149/1/012186

来源: IOP

【 摘 要 】

A detailed structural and electronicstudy of sol-gel synthesized and 1100°C calcined Zn1-xSixO (0 ≤ x ≤ 0.06) nano-particles were carried out using XRD, FESEM, UV- vis/PL spectroscopy studies. XRD reveals wurzite structure at (0 ≤ x ≤ 0.03) after which some extra phase is seen which is also supported by FESEM images.UVs spectroscopy revealed that band gap increases and urbach energy decreases with substitution. Due to doping of Si4+, oxygen deficiency is decreased which improve structural properties in spite of introduction of strains due to lattice contraction.Photoluminescence studiesrevealed that the reduction in defects state in the sample with Si4+substitution.