Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

8th International Scientific Conference "Issues of Physics and Technology in Science, Industry and Medicine"

物理学;工业技术;医药卫生

Zhidik, Y.S.^1 ; Troyan, P.E.^1 ; Baturina, E.V.^1 ; Korzhenko, D.V.^2 ; Yurjev, Y.N.^2

Department of Physical Electronics, Faculty of Electronic Engineering, Tomsk State University of Control Systems and Radio-electronics, pr. Lenina, 40, Tomsk

634050, Russia^1

Department of Experimental Physics, Institute of Physics and Technology, National Research Tomsk Polytechnic University, pr. Lenina, 30, Tomsk

634050, Russia^2

关键词: Cold substrates;    Deposition technology;    High reproducibility;    ITO films;    Magnetron reactive sputtering;    Production technology;    Reactive magnetron sputtering;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/135/1/012055/pdf
DOI  :  10.1088/1757-899X/135/1/012055

来源: IOP

【 摘 要 】

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.