Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires

3rd International Conference on Competitive Materials and Technology Processes

Zhang, X.^1,3,4 ; Zhong, B.^2 ; Liu, L.^1 ; Huang, X.^1 ; Wen, G.^1,2 ; Huang, Y.^3 ; Bollmann, J.^1,4

School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China^1

School of Materials Science and Engineering, Harbin Institute of Technology, Weihai, China^2

School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin, China^3

Institute of Electronic and Sensor Materials, TU Bergakademie Freiberg, Freiberg, Germany^4

关键词: Atmosphere annealing;    Gas pressures;    Monocrystalline structures;    Nano-composite powders;    SiC nanowire;    Silicon carbide nanowires;    Sintering furnaces;    Transmission electron;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/123/1/012051/pdf
DOI  :  10.1088/1757-899X/123/1/012051

来源: IOP

【 摘 要 】

Silicon carbide nanowires were fabricated by gas pressure annealing of SiOC nanocomposite powders, which were synthesized by pyrolysis of a SiO2- sucrose gel. The reaction was carried out in an atmosphere sintering furnace without any additives. The nanowires have pronounced homogenous diameters smaller than 100 nm and lengths of up to several millimetres. The X-ray diffraction pattern indicates the formation of the β-SiC phase and transmission electron microscopy analysis show the monocrystalline structure of the nanowires.