Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation

International Scientific Conference on "Radiation-Thermal Effects and Processes in Inorganic Materials"

材料科学;物理学

Gradoboev, A.V.^1 ; Orlova, K.N.^1

Tomsk Polytechnic University, 30 Lenina av., Tomsk

634050, Russia^1

关键词: Active regions;    AlGaInP;    Empirical relations;    Fast neutrons;    Partial recovery;    Radiation Exposure;    Radiative defects;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/81/1/012008/pdf
DOI  :  10.1088/1757-899X/81/1/012008

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.