Research on the radiation exposure "memory effects" in AlGaAs heterostructures

International Scientific Conference on "Radiation-Thermal Effects and Processes in Inorganic Materials"

材料科学;物理学

Gradoboev, A.V.^1 ; Sednev, V.V.^1

Tomsk Polytechnic University, 30 Lenina av., Tomsk

634050, Russia^1

关键词: Experimental research;    High temperature;    Infrared light;    Memory effects;    Possible mechanisms;    Radiation defects;    Radiation Exposure;    Radiation stability;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/81/1/012007/pdf
DOI  :  10.1088/1757-899X/81/1/012007

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the "memory effect" that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the "memory effect" that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the "memory effect" occurrence are under review.