Effect of por-SiC buffer layer on the parameters of thin Er2O3 layers on silicon carbide substrates

International Scientific Conference on "Radiation-Thermal Effects and Processes in Inorganic Materials"

材料科学;物理学

Bacherikov, Yu Yu^1 ; Konakova, R.V.^1 ; Okhrimenko, O.B.^1 ; Berezovska, N.I.^2 ; Kapitanchuk, L.M.^3 ; Svetlichnyi, A.M.^4 ; Svetlichnaya, L.A.^4

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv

03028, Ukraine^1

Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv

01601, Ukraine^2

Paton Institute of Electric Welding, National Academy of Sciences of Ukraine, Kyiv

03680, Ukraine^3

Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog

347928, Russia^4

关键词: 4H-SiC substrate;    Atomic compositions;    Auger spectrometry;    Erbium oxide;    Porous SiC;    Rapid thermal annealing (RTA);    SiC buffer layers;    Silicon carbide substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/81/1/012019/pdf
DOI  :  10.1088/1757-899X/81/1/012019

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Using optical absorption and Auger spectrometry techniques, we studied the effect of rapid thermal annealing (RTA) on the properties of erbium oxide films deposited onto a porous silicon carbide buffer layer formed on 4H-SiC substrates. An analysis of atomic composition of the films under investigation as a function of RTA duration was performed. It is shown that phase composition of erbium oxide films on silicon carbide substrates with a porous SiC layer can be changed by varying RTA duration.