Anisotropic distortions in Sb doped CePt4Ge12

12th Europhysical Conference on Defects in Insulating Materials

材料科学;物理学

Bridges, F.^1 ; Nast, P.^1 ; Wilde, J.^1 ; Keiber, T.^1 ; Maple, M.B.^2 ; Huang, K.^3 ; White, B.D.^2

Physics Department, UCSC, Santa Cruz

CA

95064, United States^1

Physics Department, UCSD, San Diego

CA

92093, United States^2

Materials Science and Engineering Program, UCSD, San Diego

CA

92093, United States^3

关键词: Anisotropic distortion;    Extended X-ray absorption fine structure techniques;    Lattice thermal conductivity;    Local structure;    Low temperatures;    Nearest neighbors;    Sb-doped;    Thermoelectric properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/80/1/012004/pdf
DOI  :  10.1088/1757-899X/80/1/012004

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We investigated the local structure of the Sb doped skutterudite CePt4Ge12-xSbxusing the Extended X-ray Absorption Fine Structure Technique (EXAFS). As the concentration of Sb is increased the disorder around Ce increases rapidly, and for x = 3, the peak for the nearest neighbor (Ce-Ge) is no longer observed. In contrast, for the Pt site, the disorder of the nearest neighbors is small even for x = 3. Thus the distortions are anisotropic and appear to be mainly in the plane of the Ce-Ge bonds and Ge4rings. The increased disorder about Ce will decrease the lattice thermal conductivity at low temperatures, and likely is part of the reason for improved thermoelectric properties for the x = 1 sample.