Revealing the effect of electrode materials on the performance of low-voltage pentacene thin film transistor by in-situ surface potential measurement

4th Global Conference on Materials Science and Engineering

Chen, Q.L.^1 ; Ouyang, M.^2 ; Liu, Q.C.^1 ; Jin, H.Y.^1 ; Xie, W.G.^2

Department of Medical Devices, Guangdong Food and Drug Vocational College, Guangdong

510520, China^1

Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong

510632, China^2

关键词: Apparent mobility;    Contact potential;    Electrode material;    Injection barriers;    Kevin probe microscopy;    Pentacene thin film transistors;    Pentacene thin films;    Surface potential measurements;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/103/1/012011/pdf
DOI  :  10.1088/1757-899X/103/1/012011

来源: IOP

【 摘 要 】

We investigate the effect of contact potential between Au, CuOxand Au-CuOx, and pentacene thin films by Kevin Probe microscopy Compared to the Au contact, although the injection barrier is lower for CuOxcontact, the extraction barrier is higher, and the total contact resistance is only slightly smaller. The better performance of CuOxcontact device results from the doping effect from the p-type CuOx. The introduction of additional Au top layer deposited on the thin CuOxlayer lowersthe extraction barrier and facilitates better carrier transfer, which further reduces the contact resistance. Therefore, both the apparent mobility and channel mobility are the best in the device with Au-CuOxdouble layer contact.