Synthesis of AgInS2 semiconductor nano crystals by solvothermal method

International Conference on Materials Science and Technology 2012

Sugan, S.^1 ; Dhanasekaran, R.^1

Crystal Growth Centre, Anna University, Chennai

600 025, India^1

关键词: Differential thermal analyses (DTA);    Energy dispersive x-ray;    High-resolution scanning electron microscopes;    Morphology and composition;    Nanocrystalline silver;    Photoluminescence spectrum;    Powder X ray diffraction;    Solvothermal method;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/73/1/012147/pdf
DOI  :  10.1088/1757-899X/73/1/012147

来源: IOP

【 摘 要 】

A solvothermal route was proposed to synthesis nanocrystalline silver indium sulfide (AgInS2) using ethylenediamine as a solvent. The reaction was carried out in an autoclave in the temperature of 200 °C with AgCl, Indium (In) and sulfur (S) as reactants. Powder X-ray diffraction studies show that the synthesized nano crystals belongs to orthorhombic phase AgInS2 with cell parameters a= 7.001 Å, b= 8.278 Å, and c= 6.698 Å. High resolution scanning electron microscope (HR-SEM) and Energy Dispersive X-ray (EDX) analyses have been carried out for the synthesized nano crystals to find the surface morphology and composition respectively. The band gap of the synthesized nano crystals was determined from UV-Vis spectrum and photoluminescence spectrum. The melting point of the AgInS2 nano crystals was found to be 956°C using differential thermal analysis (DTA).