Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

International Conference on Materials Science and Technology 2012

Takhar, K.^1 ; Gomes, U.P.^1 ; Ranjan, K.^1 ; Rathi, S.^1 ; Biswas, D.^1

Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal

721302, India^1

关键词: DC characterization;    Density of state;    Device performance;    Effective electrons;    Low field mobility;    Material parameter;    Temperature dependent;    Velocity saturation;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/73/1/012001/pdf
DOI  :  10.1088/1757-899X/73/1/012001

来源: IOP

【 摘 要 】

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.