Theoretical investigation of optical and structural properties of Ba-doped ZnO material

Brazil MRS Meeting 2014

Lacerda, L.H.S.^1 ; De Lazaro, S.R.^1 ; Ribeiro, R.A.P.^1

Ponta Grossa State University, Department of Chemistry, Ponta Grossa, PR, Brazil^1

关键词: Ba-doped;    Doping process;    Electronic device;    Photocatalytic process;    Theoretical investigations;    Wurtzite zno;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/97/1/012005/pdf
DOI  :  10.1088/1757-899X/97/1/012005

来源: IOP

【 摘 要 】

The doping process is a technique widely used for improving the properties of semiconductors. Through insertion of doping controlled amount is possible change drastically the electronic, optical and structural properties of a material. This work focuses on effects of Ba atoms insertion on wurtzite-ZnO structure at 12.5% amount. The results showed that the presence of Ba in low quantity cause increase in the lattice parameters and decrease in band- gap in relation to the ZnO material. In the percentage of 12.5%, the doping is noted as a potential alternative for application in opt-electronic devices, electronic devices, solar cells and photocatalytic process.