Effect of Addition Pb Content on Lead Titanate Thin Films for MIM Capacitor

2014 International Conference on Manufacturing, Optimization, Industrial and Material Engineering

Nurbaya, Z.^1,2 ; Rusop, M.^1

NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia^1

Razak School of Engineering and Advanced Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia^2

关键词: Crystallization process;    Ferroelectric random access memory;    Lead content;    Lead titanate thin films;    Metal insulator metal capacitor (MIM);    Micro-structural properties;    Nanoscaled;    Perovskite structures;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/58/1/012003/pdf
DOI  :  10.1088/1757-899X/58/1/012003

来源: IOP

【 摘 要 】

Lead titanate (PbTiO3) has been precisely studied on the films preparation due to its unique perovskite structure having ferroelectric behaviour with high permittivity factor for complex storage applications such as capacitor, transistor, and ferroelectric random access memory. In the need to have high quality (PbTiO3) thin films, the lead (Pb) volatilization during crystallization process by means of applying heat treatment as part of crystal growth purpose must be realized. Therefore addition of Pb excess is the highest consideration in lead based composite to ensure perfect crystal growth ever form as well as yield to great particles polarization. There are some issues like fatigue, imprinting, and leakage current that need to be considered to assess the thin films performance. However, the present study focuses only on the crucial issue of leakage current behaviour of the nanoscaled thickness that might be in relation to the microstructural properties of the thin films. Thus, the influence of having extra Pb content might ascertain the benefits of PbTiO3thin films towards high performance metal-insulator-metal capacitor.