Structural and luminescence properties of undoped and Eu-doped SiOC thin films

EMRS 2013 Spring Meeting, Symposium G: Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

Bellocchi, G.^1,2 ; Franzò, G.^1 ; Boninelli, S.^1 ; Miritello, M.^1 ; Cesca, T.^3 ; Iacona, F.^1 ; Priolo, F.^1,2

MATIS IMM CNR, via Santa Sofia 64, 95121 Catania, Italy^1

Dipartimento di Fisica e Astronomia, Università di Catania, via Santa Sofia 64, 95121 Catania, Italy^2

Dipartimento di Fisica e Astronomia, Università di Padova, Via F. Marzolo 8, 35131 Padova, Italy^3

关键词: Annealing condition;    Clustering phenomena;    Host matrices;    Luminescence properties;    Photonic application;    rf-Magnetron sputtering;    Room temperature luminescence;    Solid solubilities;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/56/1/012009/pdf
DOI  :  10.1088/1757-899X/56/1/012009

来源: IOP

【 摘 要 】

We report on the investigation of the structural, chemical and optical properties of undoped and Eu-doped SiOC thin films synthetized by RF magnetron sputtering. Undoped SiOC exhibits an intense room temperature luminescence at ∼ 500 nm, and an important contribution to this signal is due to the presence of Si-C bonds. Moreover, when inserted in a SiOC matrix, Eu ions have a higher solid solubility with respect to pure SiO2; as a consequence, we observe a reduction of Eu clustering phenomena. Furthermore the reducing properties of SiOC, related to the presence of C, allow the prevalence of the Eu2+emission over the Eu3+one. Through the control of the annealing conditions it is possible to obtain an intense light emission at 440 nm. These properties propose SiOC as a novel and efficient Si-based host matrix for Eu and open the way to promising perspectives of Eu-based materials for photonic applications and LED fabrication.