TSL and fractional glow study of Ge-doped α-quartz

International Conference on Functional Materials and Nanotechnologies 2013

材料科学;物理学

Zolatarjovs, A.^1 ; Trukhin, A.N.^1 ; Smits, K.^1 ; Millers, D.^1

Institute of Solid State Physics, University of Latvia, Latvia^1

关键词: Defect state;    Ge concentrations;    Self-trapped holes;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/49/1/012056/pdf
DOI  :  10.1088/1757-899X/49/1/012056

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Crystalline α-quartz doped with 0.1wt% and 0.9wt% germanium was studied using TSL and FGT equipment. Sample was chosen because previously it is known that Ge in quartz is efficient trap for electrons, therefore it could be used for detection of hypothetic self-trapped hole in α-quartz. However previous investigations of ODMR and TSL shows that in α-quartz the hole is still mobile and trapping occurs only on defect states. The activation energies for both TSL peaks are found by fractional glow and Hoogenstraaten method. The TSL distribution changes depending on Ge concentration and also on irradiation type. The TSL peaks below 70K in quartz doped with Ge could belong to hole trapped on Ge.