Modeling of thin films growth processes in the early stage for atoms with covalent bonds

24th International Conference on Vacuum Technique and Technology

Tupik, V.A.^1 ; Margolin, V.I.^1 ; Su, Chu Trong^1

Department of Radio Microelectronics and Radio Equipment Technology, Electrotechnical University, LETI, Saint Petersburg

197376, Russia^1

关键词: Adequate models;    Anisotropic interaction;    Growth process;    High complexity;    Thin films growth;    Vacuum condition;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/872/1/012052/pdf
DOI  :  10.1088/1742-6596/872/1/012052

来源: IOP

【 摘 要 】

Computer simulation for obtaining thin film's growth process at an early stage with the proposed model of atoms with isotropic and anisotropic interactions been considered. Carrying out the procedure for analyzing the problem on the basis of the program being implemented, computer simulation of thin film growth processes has been carried out on several examples. The results of computer simulation of the growth process of thin film on a given substrate and an aggregate in a vacuum condition are shown. Some characteristic distributions of the obtained structure have been carried out to evaluate the proposed adequate model and to reflect the high complexity of thin films growth process.