X-ray photoelectron spectroscopy method for obtaining a CuIn0.95Ga0.05Se2 thin film: development of technology and a phase composition studying

24th International Conference on Vacuum Technique and Technology

Kalazhokov, Kh Kh^1 ; Kalazhokov, Z Kh^1 ; Gadjiev, T.M.^2 ; Aliev, M.A.^2 ; Ismailov, A.M.^2 ; Gadjieva, R.M.^2 ; Asvarov, A Sh^2 ; Arslanov, R.K.^2 ; Kozyrev, E.N.^3 ; Filonenko, V.I.^3 ; Askerov, R.O.^3

Kabardino-Balkarian State University (KBSU), KBR, Nalchik, ul. , 5, Gorky

360000, Russia^1

Amirkhanov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences (RAS), Makhachkala

367003, Russia^2

North Caucasian Institute of Mining and Metallurgy, State Technological University, NCIMM (STU), North Ossetia-Alania, Vladikavkaz, ul. 44, Nikolaeva

362021, Russia^3

关键词: Carrier gas;    Film materials;    Morphology and structures;    Sem and xrd;    Two-stage;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/872/1/012041/pdf
DOI  :  10.1088/1742-6596/872/1/012041

来源: IOP

【 摘 要 】

A technology of two stage selenezation method in the carrier gas (nitrogen) stream of the reaction component (selenium) has been suggested for the CuIn0.95Ga0.05Se2thin film growing. Morphology and structure of the CuIn0.95Ga0.05Se2film have been studied by SEM and XRD methods. Phase compound of film material for the CuIn0.95Ga0.05Se2semiconductor solution has been studied by X-ray photoelectron spectroscopy method.