Carrier-Doping Dependence of Critical Current Density in Ba1-x K x Fe2As2 Single Crystals and Superconducting Wires

29th International Symposium on Superconductivity

Pyon, S.^1 ; Suwa, T.^1 ; Tamegai, T.^1

Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo

113-8656, Japan^1

关键词: Carrier doping;    Copper tubes;    Magnetization measurements;    Polycrystalline;    Powder-in-tube method;    Self-flux methods;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/871/1/012060/pdf
DOI  :  10.1088/1742-6596/871/1/012060

来源: IOP

【 摘 要 】

The carrier-doping dependence of Jcin Ba1-xKxFe2As2single crystals and superconducting wires were investigated. Ba1-xKxFe2As2single crystals (0.24 1-xKxFe2As2wires are fabricated by powder-in-tube (PIT) method and hot isostatic pressing (HIP) technique, using polycrystalline Ba1-xKxFe2As2(0.25 cwas characterized by magnetization measurements. We found that the x-dependence of Jcin single crystals shows the peak in under-doped region around x ∼ 0.28 similar to previous study. In the HIP wire, although significant peak is not observed, Jcshows a broad plateau in a wide doping region of 0.3 cin the under-doped Ba1-xKxFe2As2HIP wire is controlled by interglanular Jc.