Characteristics of Einstein oscillator, electron-phonon interaction, and band-edge absorption in LiNbO3:In

Photorefractive Photonics 2017

Xin, Feifei^1

College of Physics and Materials Science, Tianjin Normal University, Tianjin

300387, China^1

关键词: Band-edge absorption;    Band-edge structures;    Defect cluster;    Einstein oscillators;    Electron phonon;    LiNbO3 crystals;    Micro mechanisms;    Photorefractivity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/867/1/012040/pdf
DOI  :  10.1088/1742-6596/867/1/012040

来源: IOP

【 摘 要 】

Based on the Einstein oscillator model and the Urbach rule, we study the electron-phonon interaction and the band-edge structure of highly doped LiNbO3:In. Significant reduction of the Einstein oscillator energy and the electron-phonon interaction strength appears in highly doped LiNbO3:In compared with the undoped one. The absorption band near to the UV band edge in highly doped LiNbO3:In, which is much stronger than that in the undoped LiNbO3crystal, may be related to the defect clusters and and the micromechanism of the UV photorefractivity in LiNbO3:In.