Investigation of Deep-level Defects in CuGaSe2 Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy

33rd International Conference on the Physics of Semiconductors

Hu, X.B.^1 ; Weng, G.E.^1 ; Chen, S.Q.^1 ; Akimoto, K.^2

Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai

200241, China^1

Institute of Applied Physics, University of Tsukuba, Tsukuba

305-8577, Japan^2

关键词: Capacitance spectroscopy;    Configuration coordinate model;    CuGaSe2 thin films;    Deep-level defects;    Gaussians;    Lattice distortions;    Thermal quenching;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012077/pdf
DOI  :  10.1088/1742-6596/864/1/012077

来源: IOP

【 摘 要 】

Properties of deep-level defects in CuGaSe2thin-film solar cells were investigated using transient photo-capacitance (TPC) spectroscopy. Two Gaussian-shaped deep-level defects centered at around 0.8 eV and 1.54 eV above the valence band were identified. The electronic structure of the two defects was illustrated by a configuration coordinate model to explain the thermal quenching effect in the two defects, which considered a large lattice distortion for the 0.8 eV defect while no distortion for the 1.54 eV defect.