Photoluminescence of the PbS quantum dots fabricated by the Langmuir-Blodgett technique

33rd International Conference on the Physics of Semiconductors

Gulyaev, D.V.^1 ; Sveshnikova, L.L.^1 ; Bacanov, S.A.^1 ; Gutakovskii, A.K.^1,2 ; Zhuravlev, K.S.^1,2

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Lavrentiev avenue, 13, Novosibirsk

630090, Russia^1

Novosibirsk State University, Pirogov Street, 2, Novosibirsk

630090, Russia^2

关键词: Carrier transfer;    Langmuir Blodgett techniques;    Langmuir-blodgett;    Luminescence intensity;    PbS nanoclusters;    Structure property;    Temperature decrease;    Temperature increase;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012074/pdf
DOI  :  10.1088/1742-6596/864/1/012074

来源: IOP

【 摘 要 】

The optical and structure properties of the PbS nanoclusters in the Langmuir-Blodgett matrix as well as their properties after the matrix removal in the ammonium atmospheres have been studied. According to the electron microscopy data, it has been established that there are PbS nanoclusters formed on the surface of the samples. It has been found that the matrix removal results in a significant enlargement of the PbS nanocrystals accompanied by the shift of the luminescence into the infra-red range. It has been shown that the PL intensity of PbS quantum dots (QDs) in the matrix decreases with the temperature decrease due to the carrier transfer into defect QDs whereas the the luminescence intensity of the PbS nanocrystals without a matrix grows at the temperature increase.