Circular photon drag effect in bulk semiconductors

33rd International Conference on the Physics of Semiconductors

Shalygin, V.A.^1 ; Moldavskaya, M.D.^1 ; Danilov, S.N.^2 ; Farbshtein, I.I.^3 ; Golub, L.E.^3

Department of Physics of Semiconductors and Nanoelectronics, Peter the Great St. Petersburg Polytechnic University, St. Petersburg

195251, Russia^1

Terahertz Center, University of Regensburg, Regensburg

93040, Germany^2

Ioffe Institute, St. Petersburg

194021, Russia^3

关键词: Bulk semiconductors;    Incidence angles;    Intersubband optical transitions;    Microscopic modeling;    Mid-infrared range;    Photon drag effects;    Spectral data;    Symmetry analysis;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012072/pdf
DOI  :  10.1088/1742-6596/864/1/012072

来源: IOP

【 摘 要 】

We report on the observation of the circular photon drag effect in a bulk semiconductor. The photocurrent caused by a transfer of both linear and angular momenta of photons to charge carriers is detected in tellurium. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Experimental spectral data on the photocurrent in mid-infrared range qualitatively agree with a microscopic model of the circular photon drag effect considering intersubband optical transitions of holes in tellurium.