Charge carrier kinetics in GeSi/Si quantum dots probed by mid-infrared radiation

33rd International Conference on the Physics of Semiconductors

Sofronov, A.N.^1 ; Vorobjev, L.E.^1 ; Firsov, D.A.^1 ; Balagula, R.M.^1 ; Tonkikh, A.A.^2,3

Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg

195251, Russia^1

Scia-Systems GmbH, Annaberger-Str. 240, Chemnitz, Germany^2

Institute for Physics of Microstructures RAS, GSP-105, Nizhnii Novgorod

603950, Russia^3

关键词: Charge carrier kinetics;    Electron localizations;    Mid-infrared radiation;    Photoinduced absorption;    Relaxation kinetics;    Self-assembled arrays;    Short-pulsed;    Temporal evolution;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012069/pdf
DOI  :  10.1088/1742-6596/864/1/012069

来源: IOP

【 摘 要 】

The mid-infrared photo-induced absorption relaxation kinetics of the self-assembled array of GeSi quantum dots in Si matrix was studied in the conditions of short pulsed interband optical excitation. The measured absorption decay curves directly show the temporal evolution of the population of the QD ground states. The analysis of the experimental data allowed us to estimate characteristic recombination and capture times, and the electron localization energy in the vicinity of QD.