Graphical Representation and Origin of Piezoresistance Effect in Germanium

33rd International Conference on the Physics of Semiconductors

Matsuda, K.^1 ; Nagaoka, S.^2 ; Kanda, Y.^3

Department of Nano and Bio Material Engineering, Tokushima Bunri University, Sanuki, Kagawa

769-2101, Japan^1

Department of Electric Systems Engineering, National Institute of Technology Kagawa College, Kagawa, Mitoyo

769-1101, Japan^2

Research Institute of Industrial Technology, Toyo University, Saitama, Kawagoe

350-8585, Japan^3

关键词: Crystal direction;    Energy surface;    Graphical representations;    Piezoresistance;    Piezoresistance coefficients;    Piezoresistance effects;    Theoretical modeling;    Two bands;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012045/pdf
DOI  :  10.1088/1742-6596/864/1/012045

来源: IOP

【 摘 要 】

The longitudinal and transverse piezoresistance coefficients of Ge at room temperature are represented graphically as a function of the crystal directions for orientation (001), (110) and (211) planes. Many valley model of conduction band and stress decoupling decoupling of the degenerate valence band into two bands of prolate and oblate ellipsoidal energy surface are shown to explain origin of the piezoresistance. One this basis, comparison between piezoresistance coefficient and theoretical model is discussed.