MoS2 materials synthesized on SiO2/Si substrates via MBE

33rd International Conference on the Physics of Semiconductors

Zhan, Linjie^1 ; Wan, Wen^1 ; Zhu, Zhenwei^1 ; Shih, Tien-Mo^1 ; Cai, Weiwei^1

Department of Physics, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, 361005, China^1

关键词: Chemical vaporization;    Layered transition metal dichalcogenides;    Source material;    Tunabilities;    Two Dimensional (2 D);   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012037/pdf
DOI  :  10.1088/1742-6596/864/1/012037

来源: IOP

【 摘 要 】

Two-dimensional (2D) MoS2materials possess indirect-to-direct bandgap tunability, and have enjoyed wide applications in electronics and optoelectronics. Most of investigators have ubiquitously synthesized these materials by using the chemical vaporization deposition (CVD) method. Here we have adopted MoO3source materials to synthesize MoS2on 280-nm SiO2/Si substrates via molecular beam epitaxy (MBE). We have obtained triangular nucleation, tens-of-micron domain, and monolayer MoS2. This MBE technique can be applied to synthesizing other members of semiconducting layered transition metal dichalcogenides (TMDCs), such as WS2, MoSe2, and WSe2materials.