Charge mobility modification of semiconducting carbon nanotubes by intrinsic defects

33rd International Conference on the Physics of Semiconductors

Bai, Hongcun^1,2 ; Ma, Yujia^1,2 ; Ma, Jinsuo^1,2 ; Mei, Jingnan^1,2 ; Tong, Yan^1,2 ; Ji, Yongqiang^1,2

State Key Laboratory Cultivation Base of Natural Gas Conversion, Ningxia University, Yinchuan, Ningxia

750021, China^1

School of Chemistry Science and Engineering, Ningxia University, Yinchuan, Ningxia

750021, China^2

关键词: Charge mobilities;    CNTs;    Deformation potential;    High carrier mobility;    Intrinsic defects;    Nanoscale electronics;    Preparation method;    Semiconducting carbon nanotubes;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012030/pdf
DOI  :  10.1088/1742-6596/864/1/012030

来源: IOP

【 摘 要 】

Charge carrier mobility is a central transport property in nanoscale electronics. Carbon nanotubes (CNTs) are supposed to have high carrier mobility. The preparation methods of CNTs have been greatly improved, but the defects always exist. This work presented first-principle investigations on the charge carrier mobility of carbon nanotubes containing several intrinsic defects. The charge carrier mobilities of zigzag (10, 0) tubes with Stone-Wales, mono vacant and 5/8/5 defects were studied as an example to explore the role of defects. Most carrier mobilities were decreased, but several values of mobility are unexpectedly increased upon the appearance of the defects. This interesting result is discussed based on the changes of the stretching modulus, the effective mass of the carrier and deformation potential constant induced by the defects.