Maximum entropy mobility spectrum analysis of LPE-grown and anodic oxidated Hg1-xCdxTe(x=0.237)

33rd International Conference on the Physics of Semiconductors

Song, Z.Y.^1 ; Shang, L.Y.^1 ; Lin, T.^2 ; Wei, Y.F.^2 ; Chu, J.H.^1,2

Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai

200062, China^1

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai

200083, China^2

关键词: Dominant contributions;    Freeze out;    HgCdTe films;    High-mobility electrons;    Low mobility electrons;    Magneto transport properties;    Mobility spectra;    Mobility spectrum analysis;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012026/pdf
DOI  :  10.1088/1742-6596/864/1/012026

来源: IOP

【 摘 要 】

In this paper, magneto-transport properties of the LPE-grown and anodic oxidated p-type Hg1-xCdxTe(x=0.237) films have been studied by using maximum entropy mobility spectrum analysis (ME-MSA) technique. It can be found that the high-mobility electron (μe∼2 × 104cm2/Vs) has considerable contributions to the conduction of anodic oxidated Hg1-xCdxTe(x=0.237) film, but not in LPE-grown Hg1-xCdxTe(x=0.237) film. The high-mobility electron maintains dominant contributions from 11k to 150k, which can be attributed to two-dimensional electron gas in the inversion layer of anodic oxidated p-type Hg1-xCdxTe(x=0.237) film. In addition, we also observe the nonphysical contributions of low mobility electrons (μe∼0.08 × 104cm2/Vs) in mobility spectrum of both LPE-grown and anodic oxidated p-type HgCdTe films. The low-mobility electrons, so-called mirror peaks, can be interpreted as a consequence of magnetic freeze-out of holes in vacancy-doped HgCdTe, which disappeared at T=150k.