Optical investigations and strain effect in AlGaN/GaN epitaxial layers

33rd International Conference on the Physics of Semiconductors

Jayasakthi, M.^1,2 ; Juillaguet, S.^1 ; Peyre, H.^1 ; Konczewicz, L.^1 ; Moret, M.^1 ; Briot, O.^1 ; Baskar, K.^2 ; Contreras, S.^1

Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS, Université de Montpellier, Montpellier

FR-34095, France^1

Crystal Growth Centre, Anna University, Chennai

600 025, India^2

关键词: C-plane sapphire substrates;    High resolution X ray diffraction;    Metal organic;    Optical investigation;    Reflectivity measurements;    Strain and stress;    Strain effect;    Temperature dependent;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012021/pdf
DOI  :  10.1088/1742-6596/864/1/012021

来源: IOP

【 摘 要 】

AlxGa1-xN epilayers with x ranging from 0.20 to 0.50 have been grown on c-plane sapphire substrate by metal-organic chemical vapor deposition. The thickness, composition, strain and stress values of the AlGaN were determined by high resolution X-ray diffraction. The optical properties of the epilayers were studied using photoluminescence (PL) and reflectivity measurements. The effect of the stress on the bandgap can be explained by room temperature PL. The temperature dependent PL result shows the well-known "S-shape" behavior.