33rd International Conference on the Physics of Semiconductors | |
Optical Tailoring of RF Magnetron Sputtered ZnO Thin Films | |
Hassan, A.^1 ; Feng, C.^1 ; Riaz, S.^2 ; Naseem, S.^2 ; Jiang, Y.^1 | |
Institute of Laser Engineering, Beijing University of Technology, Beijing | |
100124, China^1 | |
Centre of Excellence in Solid State Physics, University of the Punjab, Lahore | |
54590, Pakistan^2 | |
关键词: Doped ZnO thin films; High transmittance; Optoelectronic; Photovoltaic devices; rf-Magnetron sputtering; Soda Lime glass; Spectroscopic ellipsometers; Visible region; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012014/pdf DOI : 10.1088/1742-6596/864/1/012014 |
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来源: IOP | |
【 摘 要 】
Pure and N2doped ZnO thin films of thickness ranging ∼300-500nm with 5,10,15,20,25, and 50 sccm inflow ratios of N2are deposited on soda-lime glass by means of RF magnetron sputtering system, and observed the dependence of optical properties of ZnO by the function of doping with the help of spectroscopic ellipsometer. And found that the N2-inflow highly affects the optical properties of ZnO thin films. Even the high transmittance of about 97% is achieved and absorbance graph also shows that slight variation in N2inflow affects the absorbance, which is maximum with in UV region. Optical conductivity of ZnO is also observed high with the increase of N2inflow. With 25sccm N2inflow conductivity rose to the maximum value of about 1.4 × 107Ω-1cm-1, with 15sccm inflow of N2conductivity value is 2.0 × 106Ω-1cm-1in the visible region. This is a strong contribution towards next generation photovoltaic devices.
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