Doping effect in Si Nanocrystals/SiO2 multilayers

33rd International Conference on the Physics of Semiconductors

Li, Dongke^1 ; Lu, Peng^1 ; Qian, Minqing^1 ; Xu, Jun^1 ; Li, Wei^1 ; Chen, Kunji^1

School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing

210093, China^1

关键词: Doping effects;    High temperature;    Multi-layered structure;    Nano device;    Optoelectronic characteristics;    Photoluminescence properties;    Radiative recombination;    Si nanocrystal;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012012/pdf
DOI  :  10.1088/1742-6596/864/1/012012

来源: IOP

【 摘 要 】

Doping in Si nano-crystals (Si NCs) is currently a great challenge to develop the high-performance nano-devices. Here, we fabricated P-doped Si NCs by PECVD in Si/SiO2multilayered structures after annealing at high temperature. It is demonstrated experimentally that P dopants can be incorporated into Si NCs substitutionally. Furthermore, we found that the photoluminescence properties of Si NCs can be drastically modified by P doping in Si NCs/SiO2multilayers with the ultra-small size. A subband light emission centred at 1200nm is observed, which can be ascribed to the radiative recombination via the P-induced deep level in the gap of the Si NCs. Interestingly, it is also found that the subband emission can be enhanced obviously by B and P co-doping. Our results suggest that doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs, which provide a new route to realize the Si NCs-based optical and electronical devices.