Electronic structure of graphene/hexagonal boron nitride heterostructure revealed by Nano-ARPES

33rd International Conference on the Physics of Semiconductors

Chen, Chaoyu^1 ; Avila, José^1 ; Wang, Shuopei^2 ; Yang, Rong^2 ; Zhang, Guangyu^2 ; Asensio, Maria C.^1

ANTARES Beamline, Synchrotron SOLEIL, Université Paris-Saclay, L'Orme des Merisiers, Saint Aubin-BP 48, Gif sur Yvette Cedex

91192, France^1

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing

100190, China^2

关键词: Angle resolved photoemission spectroscopy;    Emergent behaviours;    Inhomogeneities;    Model system;    Spatial resolution;    Van der waals;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012005/pdf
DOI  :  10.1088/1742-6596/864/1/012005

来源: IOP

【 摘 要 】

The ability to explore electronic structure and their role in determining material's macroscopic behaviour is essential to explain and engineer functions of material and device. Graphene/hexagonal boron nitride heterostructure (G/h-BN) has become a model system to study the emergent behaviour in 2D van der Waals heterostructure. Here by employing angle-resolved photoemission spectroscopy with spatial resolution ∼ 100 nm (Nano-ARPES), we give a full description on the electronic structure of G/h-BN, demonstrating the power of Nano-ARPES to detect the microscopic inhomogeneity of electronic structure for different materials.