Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon

33rd International Conference on the Physics of Semiconductors

Islamov, Damir R.^1,2 ; Gritsenko, V.A.^1,2 ; Perevalov, T.V.^1,2 ; Orlov, O.M.^3 ; Krasnikov, G. Ya^3

Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk

630090, Russia^1

Novosibirsk State University, Novosibirsk

630090, Russia^2

JSC Molecular Electronics Research Institute, Zelenograd, Moscow

124460, Russia^3

关键词: Ab initio simulations;    Charge transport mechanisms;    Current increase;    Electron transport;    High temperature;    Interstitial oxygen;    Phonon assisted;    Stress-induced leakage current;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012003/pdf
DOI  :  10.1088/1742-6596/864/1/012003

来源: IOP

【 摘 要 】

We study the charge transport mechanism of electron via traps in thermal SiO2on silicon. Electron transport is limited by phonon-assisted tunnelling between traps. Charge flowing leads to oxygen vacancies generation, and the leakage current increases. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. Taking into account results of ab initio simulations, we found that the oxygen vacancies act as electron traps in SiO2.