InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

33rd International Conference on the Physics of Semiconductors

Ji, Xianghai^1 ; Yang, Xiaoguang^1 ; Du, Wenna^1 ; Pan, Huayong^2 ; Luo, Shuai^1 ; Ji, Haiming^1 ; Xu, Hongqi^2 ; Yang, Tao^1

Institute of Semiconductors, Chinese Academy of Sciences, Beijing

100083, China^1

Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing

100871, China^2

关键词: A3. metal organic chemical vapor deposition (MOCVD);    Core-shell heterostructure;    Core-shell nanowires;    Diffusion length;    InAs/GaSb;    Metal organic;    Radial growth;    Si substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012001/pdf
DOI  :  10.1088/1742-6596/864/1/012001

来源: IOP

【 摘 要 】

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition (MOCVD) with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core without any misfit dislocations.