InxGa1-xAs obtained from independent target via co-sputtering deposition

5th Colombian Conference of Engineering Physics

物理学;工业技术

Bernal-Correa, R.^1 ; Torres-Jaramillo, S.^2 ; Pulzara-Mora, C.^2 ; Montes-Monsalve, J.^2 ; Gallardo-Hernández, S.^3 ; López-López, M.^4 ; Cardona-Bedoya, J.^5 ; Pulzara-Mora, A.^2

Grupo DEMA, Facultad de Ciencias e Ingeniería, Universidad Del Sinu, Montería, Colombia^1

Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Manizales

A.A. 124, Colombia^2

Departamento de Ingeniería Eléctrica, Centro de Investigación y de Estudios, Avanzados Del IPN, Avenida IPN No. 2508, D. F, México

07360, Mexico^3

Departamento de Física, Centro de Investigación y de Estudios Avanzados Del I.P.N, Apartado Postal 14-740, México D.F.

07000, Mexico^4

Grupo de Investigación en Materiales Semiconductores y Superiónicos, Departamento de Física, Universidad Del Tolima, Ibagué

AA 546, Colombia^5

关键词: Co-sputtering deposition;    Crystallographic plane;    Epitaxial techniques;    Polycrystalline structure;    Preferential growth;    R.F. magnetron sputtering;    Secondary ion mass spectroscopies (SIMS);    Ternary semiconductors;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/850/1/012013/pdf
DOI  :  10.1088/1742-6596/850/1/012013

学科分类：工业工程学

来源: IOP

【 摘 要 】

This paper is focused on the preparation of InGaAs thin films on GaAs substrates by r.f. magnetron sputtering technique, using the sputtering power as control means for the formation of different stoichiometries. Results of X-ray and Raman spectroscopy allowed corroborating the formation of InxGa1-xAs in different concentrations, identifying peaks associated with crystallographic planes (X-rays) and characteristic vibrational phonon modes (Raman). An analysis performed with the Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS) techniques, allowed discussing on the composition in each of the layers. Finally, an alternative in obtaining the ternary semiconductor with polycrystalline structure and preferential growth along the direction (111) was demonstrated and generated by a technique different from the epitaxial techniques, which are commonly used for the growth of III-V semiconductors.