Inverse Design of a SOI T-junction Polarization Beamsplitter

6th conference on Advances in Optoelectronics and Micro/nano-optics

Ye, Zi^1 ; Qiu, Jifang^1 ; Meng, Chong^1 ; Zheng, Li^1 ; Dong, Zhenli^1 ; Wu, Jian^1

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing

100876, China^1

关键词: Extinction ratios;    Inverse designs;    Simulated results;    T junctions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012009/pdf
DOI  :  10.1088/1742-6596/844/1/012009

来源: IOP

【 摘 要 】

A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.82.8μm2is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively.