Experimental demonstration of directly modulated buried heterostructure DFB semiconductor laser based on reconstruction equivalent chirp technique

6th conference on Advances in Optoelectronics and Micro/nano-optics

Zhao, Guowang^1 ; Tian, Xiang^1 ; Shi, Yuechun^1 ; Zhang, Yunshan^2,3 ; Zheng, Jilin^4 ; Zou, Linjie^1 ; Chen, Xiangfei^1

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing

210093, China^1

School of Optoelectronic Engineering, Nanjing University of Posts and Telecommunication, Nanjing

210023, China^2

Nanjing University (Suzhou), High-Tech Institute, Suzhou

215123, China^3

Institute of Communication Engineering, PLA University of Science and Technology, Nanjing

210007, China^4

关键词: Buried heterostructures;    DFB semiconductor lasers;    Directly modulated;    Distributed feedback semiconductor laser;    Experimental demonstrations;    Reconstruction equivalent chirp;    Side mode suppression ratios;    Spurious free dynamic range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012007/pdf
DOI  :  10.1088/1742-6596/844/1/012007

来源: IOP

【 摘 要 】

A directly modulated buried heterostructure distributed feedback (DFB) semiconductor laser based on the reconstruction equivalent chirp (REC) technique in the 1.3 μm wavelength domain is experimentally demonstrated. The packaged laser shows a good single longitudinal mode (SLM) property, with the side mode suppression ratio (SMSR) higher than 40 dB when the injection current is higher than 20 mA, as the threshold current is 10 mA. The direct modulation performance of the laser is also delightful, with the modulation bandwidth up to 10GHz at a low injection current (40mA), and the measured spurious free dynamic range (SFDR) up to 86 dB•Hz2/3.