Theoretical investigation on the effect of nitrogen doping on the growth and field emission properties of the plasma-grown graphene sheet

Frontiers of Physics and Plasma Science

Gupta, N.^1 ; Sharma, S.C.^1 ; Gupta, R.^1

Department of Applied Physics, Delhi Technological University, Delhi

110042, India^1

关键词: Discharge parameters;    Field emission property;    Field enhancement factor;    Numerical calculation;    Plasma-assisted growth;    Positively charged ions;    Theoretical investigations;    Theoretical modeling;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/836/1/012010/pdf
DOI  :  10.1088/1742-6596/836/1/012010

来源: IOP

【 摘 要 】

A theoretical model to study the impact of nitrogen-doping on the plasma-assisted growth and field emission properties of the graphene sheet (GS) has been developed. The model incorporates the charging rate of the GS, kinetics and energy balance of all plasma species i.e., electrons, positively charged ions and neutral atoms along with the nitrogen doping species, and growth rate of the GS. Numerical calculations on the effect of nitrogen doping on the thickness of the GS have been carried out for typical glow discharge parameters. It is found that the thickness of the GS decreases with nitrogen doping. The ramifications of nitrogen doping on the field enhancement factor of GS have likewise been examined on the premise of the above result. It is observed that the nitrogen doped GSexhibits better field emission as compared to undoped GS. Some of the results of the present investigation are in compliance with the experimental observations.