Argon trapping in the depositing metal coating

5th International Congress on Energy Fluxes and Radiation Effects 2016

Begrambekov, L.B.^1 ; Grunin, A.V.^1 ; Sadovskiy, Ya A.^1 ; Puntakov, N.A.^1 ; Utkov, N.S.^1 ; Zaharov, A.M.^1

National Research Nuclear University MEPhI, 31, Kashirskoe sh., Moscow

115409, Russia^1

关键词: Beam intensity;    Deposited layer;    Rate of deposition;    Substrate temperature;    Tantalum coatings;    Tungsten coating;    Tungsten layers;    Tungsten substrate;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012108/pdf
DOI  :  10.1088/1742-6596/830/1/012108

来源: IOP

【 摘 要 】

The paper has investigated conditions and parameters of argon trapping in molybdenum, tantalum and tungsten layers during their deposition on tungsten substrate by the atoms sputtered from the respective targets in argon plasma. The substrate temperature during deposition was 1273 K. The rate of deposition was 1 μm/h. It was shown that electron irradiation of the deposited layer with the beam intensity of 4 mA/cm2initiated argon trapping in tungsten and tantalum coating with approx. 2 x 1027at/m3and 8 x 1026at/cm3, respectively, but did not stimulate argon trapping in the molybdenum layers. Features of argon trapping in the tungsten coating and its release are investigated in detail.