Electrical characteristics of epitaxial MCT after As+ implantation

5th International Congress on Energy Fluxes and Radiation Effects 2016

Voitsekhovskii, A.^1 ; Izhnin, I.^1,3 ; Korotaev, A.^1 ; Lyapunov, D.^1 ; Dvoretskii, S.^2 ; Smirnov, P.^2

National Research Tomsk State University, Tomsk

634050, Russia^1

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

630090, Russia^2

R and D Institute for Materials SRC Carat, Lviv

79031, Ukraine^3

关键词: Electrical characteristic;    Electrically active defects;    Hall measurements;    Implanted layers;    MBE MCT;    P-n junction depth;    Postimplantation annealing;    Voltage-current characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012083/pdf
DOI  :  10.1088/1742-6596/830/1/012083

来源: IOP

【 摘 要 】

In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles.