Modification of optical and electrical properties of SnO2 under the influence of argon ion beam

5th International Congress on Energy Fluxes and Radiation Effects 2016

Umnov, S.^1 ; Asainov, O.^1 ; Temenkov, V.^1

Tomsk Polytechnic University, Lenin 2, bdg. 11, Tomsk

634050, Russia^1

关键词: Deposited films;    Discharge voltages;    Electrical resistances;    Glass substrates;    Irradiation time;    Optical and electrical properties;    Reactive magnetron sputtering;    Resistance films;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012077/pdf
DOI  :  10.1088/1742-6596/830/1/012077

来源: IOP

【 摘 要 】

Thin films of tin oxide were deposited on the glass substrates at a room temperature using reactive magnetron sputtering. The ratio between O2/Ar and the discharge voltage is maintained in such a mode when the deposited films are dielectrics. After the deposition, the films were irradiated with an argon ions beam. The modification of the optical and electrical properties of the films depending on the irradiation time was studied. Optical properties of the films were analyzed in the range of 300-1100 nm using photometry and structural X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It was found that the modification in the transmittance was correlated with modifications in the meaning of surface resistance. The dielectrics films SnO2with increasing exposure time became conductive and then the electrical resistance decreased and reached a minimum at 13.2 seconds. Then resistance films began to increase.