Novel control system of the high-voltage IGBT-switch

5th International Congress on Energy Fluxes and Radiation Effects 2016

Ponomarev, A.V.^1 ; Mamontov, Y.I.^2 ; Gusev, A.I.^1 ; Pedos, M.S.^1

Institute of Electrophysics, 106 Amundsena Street, Ekaterinburg

620016, Russia^1

Ural Federal University, 19 Mira Street, Ekaterinburg

620002, Russia^2

关键词: Harmonic oscillation;    High voltage IGBT switches;    IGBT-transistors;    Operating voltage;    Rectangular pulse;    Series connections;    Solid state switch;    Transistor switch;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/830/1/012006/pdf
DOI  :  10.1088/1742-6596/830/1/012006

来源: IOP

【 摘 要 】

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.