Spin and valley transport in the ferromagnetic MoS2 junctions subjected by the gate voltage

National Conference on Theory of Magnetism

Ye, P.^1 ; Yuan, R.Y.^1 ; Xia, Y.Y.^1 ; Zhao, X.^2

Center for Theoretical Physics, Deparment of Physics, Capital Normal University, Bejing

100048, China^1

Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Bejing

100084, China^2

关键词: Fully spin-polarized;    Gate voltages;    Spin polarized transport;    Spin transport;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/827/1/012011/pdf
DOI  :  10.1088/1742-6596/827/1/012011

来源: IOP

【 摘 要 】

In this paper, we have studied valley and spin-polarized transport with different gate voltage in ferromagnetic MoS2junctions. The results show that, the valley and spin transport through the junctions has a large oscillation. In particular, a fully spin polarized current can be put out by effectively tuning the gate voltage U. Moreover, with increasing of U, the scope of the valley and spin polarization can be greatly expanded. These findings indicate the structure is a considerable candidate for the spintronics or valleytronics device.