Magnetic crossover realized by electrical methods

National Conference on Theory of Magnetism

Hao, Hua^1,2 ; Zheng, Xiaohong^1,2 ; Jia, Ting^1,2 ; Zeng, Zhi^1,2,3

Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei

230031, China^1

University of Science and Technology of China, Hefei

230026, China^2

Beijing Computational Science Research Center, Beijing

100084, China^3

关键词: Computer technology;    Electrical control;    Electrical methods;    Lowest unoccupied molecular orbital;    Molecular scale;    Molecular spintronics;    Under gate;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/827/1/012003/pdf
DOI  :  10.1088/1742-6596/827/1/012003

来源: IOP

【 摘 要 】

Electrical control of molecular-scale magnetisms is a greatly important topic in molecular spintronics. This enables the ultimate-limit manipulation of magnetisms, and has the potential to revolutionize computer technologies. Two mechanisms related to electrical control of molecular-scale magnetisms are concerned in this review. One is the magnetic crossover realized by the electrostatic Stark effect. The other is the magnetic crossover induced by the electron tunneling through the lowest unoccupied molecular orbital under bias voltages or one added electron under gate voltages.