InAs quantum dots grown by MOCVD in GaAs and metamorphic InGaAs matrixes

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Salii, R.A.^1 ; Kalyuzhnyy, N.A.^1,2 ; Kryzhanovskaya, N.V.^2 ; Maximov, M.V.^2 ; Mintairov, S.A.^1,2,3 ; Nadtochiy, A.M.^2,3 ; Nevedomskiy, V.N.^1 ; Zhukov, A.E.^2

Ioffe Institute, Saint Petersburg, Russia^1

St Petersburg Academic University, St Petersburg, Russia^2

Solar Dots Ltd, St Petersburg, Russia^3

关键词: GaAs-based structures;    Grown structures;    High intensity;    InAs quantum dots;    Metamorphic structures;    PL intensity;    Thermal escape;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012024/pdf
DOI  :  10.1088/1742-6596/816/1/012024

来源: IOP

【 摘 要 】

We have studied MOCVD-grown structures with InAs layers in GaAs and metamorphic InGaAs matrices. Deposition of 2 ML of InAs in a GaAs or In0.24Ga0.76As matrix results in quantum dots formation with photoluminescence (PL) peaks at 1240 and 1380 nm, respectively. In case of deposition of 2 ML of InAs in a In0.30Ga0.70As metamorphic matrix, formation of a corrugated quantum well emitting at 1450 nm has been revealed. The integrated PL intensity of the metamorphic structures is much higher than that for the GaAs based structure. For the metamorphic structures, the thermal escape of carriers from InAs quantum dots (a quantum well) results in high intensity of the PL line due to InGaAs matrix at room temperature.