Ga focused ion beam etching of a Si3N4/GaN substrate for submicron selective epitaxy

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Mitrofanov, M.I.^1,2,3 ; Rodin, S.N.^1 ; Levitskii, I.V.^1,2,3 ; Troshkov, S.I.^1 ; Sakharov, A.V.^1 ; Lundin, W.V.^1 ; Evtikhiev, V.P.^1

Ioffe Institute, 26 Politekhnicheskaya, St Petersburg

194021, Russia^1

Submicron Heterostructures for Microelectronics, Research and Engineering Center, RAS, 26 Politekhnicheskaya, St Petersburg

194021, Russia^2

ITMO University, 49 Kronverksky pr., St. Petersburg

197101, Russia^3

关键词: Crystalline perfection;    Focused ion beam etching;    Mask layer;    Selective area epitaxy;    Selective epitaxy;    Submicron;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012009/pdf
DOI  :  10.1088/1742-6596/816/1/012009

来源: IOP

【 摘 要 】

Authors represent utilizing UHV Ga FIB for preparing a Si3N4/GaN substrate for submicron selective-area epitaxy. In result, GaN submicron stripes were grown in the 100, 200 and 500 nm windows of a Si3N4mask layer. SEM investigations show good crystalline perfection of the grown stripes.