Luminescent property modification of SiO x /Al2O3 multilayers by annealing and hydrogenation

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Grachev, D.A.^1 ; Legkov, A.M.^1 ; Chunin, I.I.^2 ; Ershov, A.V.^1

Department of Semiconductor Physics and Optoelectronics, Lobachevsky University, Nizhny, Novgorod

603950, Russia^1

Research Institute of Physics and Technology, Lobachevsky University, Nizhny, Novgorod

603950, Russia^2

关键词: Intensity enhancement;    Layer thickness;    Luminescent property;    Nitrogen atmospheres;    Peak shift;    Room-temperature photoluminescence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012007/pdf
DOI  :  10.1088/1742-6596/816/1/012007

来源: IOP

【 摘 要 】

We have studied the composite nanoperiodic (3-8 nm) SiOx/Al2O3structures fabricated by physical deposition from separate sources. The structures annealed in nitrogen atmosphere at 900-1100 °C included Si-NCs that showed intense room-temperature photoluminescence at 1.6 eV. The quantum-confinement peak shift was observed under varying the SiOxlayer thickness. Up to fourfold intensity enhancement was observed after hydrogenation of the structures in the range of 400-450 °C for 2 hours.