会议论文详细信息
18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics | |
Luminescent property modification of SiO x /Al2O3 multilayers by annealing and hydrogenation | |
Grachev, D.A.^1 ; Legkov, A.M.^1 ; Chunin, I.I.^2 ; Ershov, A.V.^1 | |
Department of Semiconductor Physics and Optoelectronics, Lobachevsky University, Nizhny, Novgorod | |
603950, Russia^1 | |
Research Institute of Physics and Technology, Lobachevsky University, Nizhny, Novgorod | |
603950, Russia^2 | |
关键词: Intensity enhancement; Layer thickness; Luminescent property; Nitrogen atmospheres; Peak shift; Room-temperature photoluminescence; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012007/pdf DOI : 10.1088/1742-6596/816/1/012007 |
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来源: IOP | |
【 摘 要 】
We have studied the composite nanoperiodic (3-8 nm) SiOx/Al2O3structures fabricated by physical deposition from separate sources. The structures annealed in nitrogen atmosphere at 900-1100 °C included Si-NCs that showed intense room-temperature photoluminescence at 1.6 eV. The quantum-confinement peak shift was observed under varying the SiOxlayer thickness. Up to fourfold intensity enhancement was observed after hydrogenation of the structures in the range of 400-450 °C for 2 hours.
【 预 览 】
Files | Size | Format | View |
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Luminescent property modification of SiO x /Al2O3 multilayers by annealing and hydrogenation | 891KB | download |