The spin-flip scattering effect in the spin transport in silicon doped with bismuth

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Ezhevskii, A.A.^1 ; Detochenko, A.P.^1 ; Soukhorukov, A.V.^1 ; Guseinov, D.V.^1 ; Kudrin, A.V.^1 ; Abrosimov, N.V.^2 ; Riemann, H.^2

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, Nizhni, Novgorod

603950, Russia^1

Leibniz Institute for Crystal Growth, 2 Max-Born str., Berlin

D-12489, Germany^2

关键词: Concentration ranges;    Conduction electrons;    External magnetic field;    Hall effect measurement;    Silicon samples;    Spin transport;    Spin-flip scattering;    Strong magnetic fields;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012001/pdf
DOI  :  10.1088/1742-6596/816/1/012001

来源: IOP

【 摘 要 】

Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.1•1013- 7.7•1015cm-3concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum of the normal and spin Hall effects. The electrons are partially polarized by an external magnetic field and are scattered by the bismuth spin-orbit potential. Spin-flip scattering results in the additional electromotive force which compensates the normal Hall effect in strong magnetic fields.