Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks.

23rd International Conference on Spectral Line Shapes

Najda, S.P.^1 ; Slight, T.^3 ; Perlin, P.^1,2 ; Odedina, O.^4 ; Suski, T.^2 ; Marona, L.^2 ; Stanczyk, S.^1,2 ; Leszczyski, M.^1,2 ; Wisniewski, P.^1,2 ; Czernecki, R.^1,2 ; Targowski, G.^1 ; Kelly, A.E.^4

TopGaN Ltd., ul. Sokolowska 29/37, Warsaw

01-142, Poland^1

Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, Warsaw

01-142, Poland^2

CST Global, Hamilton International Technology Park, 4 Stanley Blvd, Lanarkshire, Blantyre, Glasgow

G72 0BN, United Kingdom^3

School of Engineering, University of Glasgow, Glasgow

G12 8LT, United Kingdom^4

关键词: AlGaInN;    Laser diode technology;    Narrow-line width;    Optical clocks;    Ridge waveguide laser diodes;    Side mode suppression ratios;    Single wavelength;    Telecom applications;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/810/1/012053/pdf
DOI  :  10.1088/1742-6596/810/1/012053

来源: IOP

【 摘 要 】

AlGaInN laser diode technology is of considerable interest for telecom applications and next generation atomic optical clocks based on Sr (by using 422nm & 461nm) and Rb at 420.2nm.Very narrow linewidths (