Spin Hall conductance in Y-shaped junction devices

International Conference on Strongly Correlated Electron Systems 2016

Ganguly, Sudin^1 ; Basu, Saurabh^1

Indian Institute of Technology Guwahati, Assam

781039, India^1

关键词: Anti-symmetric;    Junction devices;    Local density of state;    Quantum conductance;    Rashba spin-orbit coupling;    Spin-hall conductance;    Voltage increase;    Y-shaped junctions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/807/8/082003/pdf
DOI  :  10.1088/1742-6596/807/8/082003

来源: IOP

【 摘 要 】

We study the spin Hall effect in Y-shaped junction devices in presence of Rashba spin orbit coupling (RSOC). The voltage and the net spin current registered at one of the arms of the Y-junction are seen to increases although the spin Hall conductance (SHC) diminishes as the strength of the RSOC is increased. This implies the voltage increases further than that of the current, thereby causing a loss of the RSOC. Various other characteristic features obtained from our study include, a perfectly antisymmetric behaviour of the spin current and the SHC with respect to the zero bias, while the voltage shows a symmetric character. Finally a large RSOC completely destroys the SHC, owing to a complete disappearance of the local density of states, thereby reinforcing our earlier claim that RSOC emulates the effect of disorder on the quantum conductance of junction device.