Magnetoresistance and Hall effect of antiferromagnetic uranium compound URhIn5

International Conference on Strongly Correlated Electron Systems 2016

Haga, Yoshinori^1 ; Matsumoto, Yuji^2 ; Pospiil, Jii^1 ; Tateiwa, Naoyuki^1 ; Yamamoto, Etsuji^1 ; Yamamura, Tomoo^3 ; Fisk, Zachary^4

Advanced Science Research Center, Japan Atomic Energy Agency, Ibaraki, Tokai

319-1195, Japan^1

Graduate School of Engineering, Nagoya Institute of Technology, Nagoya

466-8555, Japan^2

Institute for Materials Research, Tohoku University, Sendai

980-8577, Japan^3

Department of Physics and Astronomy, University of California, Irvine

CA

92697, United States^4

关键词: Antiferromagnetic transition temperature;    Antiferromagnetics;    De Haas-van Alphen;    Electrical conductivity;    Hall coefficient;    Negative values;    Paramagnetic state;    Temperature independents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/807/1/012015/pdf
DOI  :  10.1088/1742-6596/807/1/012015

来源: IOP

【 摘 要 】

Magnetoresistance and Hall effect in URhIn5have been measured across the antiferromagnetic transition temperature TN= 98 K. In the paramagnetic state, Hall coefficient is small and temperature independent. Below the TN, Hall coefficient suddenly changes to a negative value, suggesting that small light electron Fermi surface dominate electrical conductivity. The observation is consistent with small Fermi surfaces detected by previous de Haas-van Alphen experiment.