Measurement of volt-ampere characteristics of the SiPM on wafer level with setup based on the PA200 BlueRay probe station

International Conference on Particle Physics and Astrophysics

物理学;天文学

Popova, Elena^1 ; Buzhan, Pavel^1 ; Kayumov, Fred^2 ; Stifutkin, Alexey^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe highway 31, Moscow

115409, Russia^1

P.N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskiy Prospekt 53, Moscow

119991, Russia^2

关键词: Applied voltages;    Current levels;    Current values;    Embedded computers;    Probe stations;    Silicon photomultiplier;    Software settings;    Volt-ampere characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/798/1/012215/pdf
DOI  :  10.1088/1742-6596/798/1/012215

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Setup for measurement of volt-ampere characteristics of the Silicon photomultipliers (SiPMs) on wafer level consisting of the probe station PA200 BlueRay with embedded computer and SourceMeter Keithley 2400 was built. The setup is controlled by the homegrown software which allows adjustment of the measurements accuracy and speed. Firstly, complete I-V curves for a few samples of the chosen SiPM structure on the wafer are measured. Based on it the range of breakdown voltage and current level are defined which are used to correct the software settings. After that the whole wafer scan is made. The resulting I-V curves are used for SiPM selection (sorting) by current value at some predefined overvoltage (the difference between applied voltage and the breakdown one). Breakdown voltage is defined as: max ((dI/dU)/I).